參數(shù)資料
型號： FDMA1032CZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 20V Complementary PowerTrench MOSFET
中文描述： 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229
封裝： 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6
文件頁數(shù)： 2/9頁
文件大?。?/td> 170K
代理商： FDMA1032CZ
FDMA1032CZ Rev B (W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 0 V
V
DS
= –16 V,
V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
I
D
= 250
μ
A
I
D
= –250
μ
A
Q1
Q2
Q1
Q2
Q1
Q2
All
20
–20
V
Breakdown Voltage
15
–12
mV/
°
C
μ
A
1
–1
±10
μ
A
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 3.7 A
V
GS
= 2.5 V, I
D
= 3.3 A
V
GS
= 4.5 V, I
D
= 3.7 A, T
J
= 125
°
C
V
GS
= –4.5V, I
D
= –3.1 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –3.1 A,T
J
= 125
°
C
V
DS
= 10 V,
I
D
= 3.7 A
V
DS
= –10 V,
I
D
= –3.1 A
I
D
= 250
μ
A
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
0.6
–0.6
1.0
–1.0
–4
4
37
50
53
60
88
87
16
–11
1.5
–1.5
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
68
86
90
95
141
140
Q2
m
g
FS
Forward Transconductance
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
340
540
80
120
60
100
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
Q1
V
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –10 V, V
GS
= 0 V, f = 1.0 MHz
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMA1032CZ 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET
FDMA1032CZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE
FDMA1430JP 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA2002NZ 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA2002NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET
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