參數(shù)資料
型號: FDMA1027P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: CAP CER 10UF 6.3V X5R 1206
中文描述: 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝: 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù): 5/6頁
文件大?。?/td> 108K
代理商: FDMA1027P
FDMA1027P Rev C1 (W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -3.0A
V
DS
= -5V
-15V
-10V
0
100
200
300
400
500
600
700
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 173
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
P
SINGLE PULSE
R
θ
JA
= 173°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=173 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
相關PDF資料
PDF描述
FDMA1028NZ 30V N-Channel PowerTrench MOSFET
FDMA1029PZ Dual P-Channel PowerTrench MOSFET
FDMA1032CZ 20V Complementary PowerTrench MOSFET
FDMA2002NZ 30V N-Channel PowerTrench MOSFET
FDMA291P Single P-Channel 1.8V Specified PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDMA1027P_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench MOSFET
FDMA1027P_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET
FDMA1027P_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
FDMA1027PT 功能描述:MOSFET -20V Dual P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMA1028NZ 功能描述:MOSFET 20V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube