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參數(shù)資料
| 型號： | FDMA1027P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 10UF 6.3V X5R 1206 |
| 中文描述： | 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 108K |
| 代理商： | FDMA1027P |
FDMA1027P Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
= 0 V
V
GS
= ± 8 V,
V
DS
= 0 V
I
D
= –250
μ
A
–20
V
–12
mV/
°
C
μ
A
nA
–1
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –3.0 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –1.8 V, I
D
= –1.0 A
V
GS
= –4.5 V, I
D
= –3.0 A, T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.0 A
I
D
= –250
μ
A
–0.4
–0.7
–1.5
V
2
mV/
°
C
m
90
120
172
118
120
160
240
160
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
7
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
435
80
45
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
11
15
6
4
0.8
0.9
18
19
27
12
6
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= –1 A,
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –3.0 A,
F
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