參數(shù)資料
型號(hào)： FDJ1028N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:12V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:72ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
中文描述： 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SC-75, 6 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 539K
代理商： FDJ1028N
2
www.fairchildsemi.com
FDJ1028N Rev. B2 (W)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 250
= 0 V, I
D
= 250
μ
A
20
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
μ
A, Referenced to 25
°
C
13
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
12 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 250
= V
GS
μ
, I
D
= 250
μ
A
0.6
1.0
1.5
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
A, Referenced to 25
°
C
–3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
D
D
D
= 3.2 A
= 3.2 A
= 2.7 A
= 3.2A, T
J
= 125
°
C
70
100
83
90
130
132
m
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
7.5
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 10 V, V
GS
= 0 V,
200
pF
C
oss
Output Capacitance
50
pF
C
rss
Reverse Transfer Capacitance
30
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
10
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 10 V, I
= 4.5 V, R
D
= 1 A,
GEN
= 6
7
14
ns
t
r
Turn–On Rise Time
8
16
ns
t
d(off)
Turn–Off Delay Time
11
20
ns
t
f
Turn–Off Fall Time
2
4
ns
Q
g
Total Gate Charge
V
V
DS
GS
= 10 V, I
= 4.5 V
D
= 3.2 A,
2
3
nC
Q
gs
Gate–Source Charge
0.4
nC
Q
gd
Gate–Drain Charge
1.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
1.25
A
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 3.2 A,
/d
t
= 100 A/μs
= 0 V, I
S
= 1.25 A (Note 2)
0.8
1.2
V
t
rr
Diode Reverse Recovery Time
I
d
F
iF
11
nS
Q
rr
Diode Reverse Recovery Charge
2.5
nC
a)
80°C/W when mounted on a
1in
pad of 2 oz copper (Single
Operation).
b)
140°C/W when mounted on a
minimum pad of 2 oz copper
(Single Operation).
相關(guān)PDF資料
PDF描述
FDJ1032C Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDJ1028N_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ1032C 功能描述:MOSFET SC75 FLMP COMPLEMENTARY POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ1032C_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDJ127P 功能描述:MOSFET P-Ch -1.8 Vgs Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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