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參數(shù)資料
| 型號： | FDJ1027P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 2.8 A, 20 V, 0.16 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SC-75, 6 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | FDJ1027P |
FDJ1027P Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain–Source BreakdownVoltage V
GS
= 0 V,
Breakdown Voltage Temperature
Coefficient
I
D
= –250
μ
A
–20
V
I
D
= –250
μ
A, Referenced to 25°C
–13
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16 V,
V
GS
= 0 V
–1
μ
A
I
GSS
Gate–Body Leakage
V
GS
= ±8 V,
V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–0.4
–0.8
3
–1.5
V
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
= –4.5 V,I
D
= –2.8 A,T
J
=125
°
C
V
DS
= –5 V,
I
D
= –2.8 A
I
D
= –2.8 A
I
D
= –2.2 A
I
D
= –1.7 A
108
163
283
150
5
160
230
390
238
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
290
pF
C
oss
Output Capacitance
55
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
29
pF
Rg
Gate Resistance
V
GS
= 15 mV
f = 1.0 MHz
18
m
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
8
16
ns
t
r
Turn–On Rise Time
13
23
ns
t
d(off)
Turn–Off Delay Time
13
23
ns
t
f
Turn–Off Fall Time
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
18
32
ns
Q
g
Total Gate Charge
3
4
nC
Q
gs
Gate–Source Charge
0.65
nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –2.8 A,
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.25
A
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–0.8
–1.2
V
trr
Diode Reverse Recovery Time
14
ns
Qrr
Diode Reverse Recovery Charge
I
F
= –2.8 A,
d
iF
/d
t
= 100 A/μs
4
nC
F
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDJ1027P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDJ1027P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDJ1028N | 功能描述:MOSFET 20V N-Ch 2.5Vgs Spec PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDJ1028N_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
| FDJ1032C | 功能描述:MOSFET SC75 FLMP COMPLEMENTARY POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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