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參數(shù)資料
| 型號： | FDG6320C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 15uF; Voltage: 6.3V; Case Size: 3.8x6.5 mm; Packaging: Tape & Reel |
| 中文描述： | 220 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 196K |
| 代理商： | FDG6320C |
Electrical Characteristics
(continued)
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
t
D(on)
Turn - On Delay Time
N-Channel
N-Ch
5
12
nS
V
DD
= 5 V, I
D
= 0.5 A ,
V
GS
= 4.5 V, R
GEN
= 50
P-Ch
5
12
t
r
Turn - On Rise Time
N-Ch
4.5
10
nS
P-Ch
8
16
t
D(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
8
nS
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 50
P-Ch
9
18
t
f
Turn - Off Fall Time
N-Ch
3.2
7
nS
P-Ch
5
12
Q
g
Total Gate Charge
N-Channel
N-Ch
0.29
0.4
nC
V
DS
= 5 V, I
D
= 0.22 A,
V
GS
= 4.5 V
P- Channel
P-Ch
0.22
0.31
Q
gs
Gate-Source Charge
N-Ch
0.12
nC
P-Ch
0.12
Q
gd
Gate-Drain Charge
V
DS
= -5 V, I
D
= -0.14 A,
V
GS
= -4.5 V
N-Ch
0.03
nC
P-Ch
0.05
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.25
A
P-Ch
-0.25
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note 2)
V
GS
= 0 V, I
S
= -0.5 A
(Note 2)
N-Ch
0.8
1.2
V
P-Ch
-0.8
-1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
CA
is determined by the user's board design. R
θ
JA
= 415
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
O
C/W on minimum mounting pad on FR-4 board in still air.
FDG6320C Rev. D
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| FDG6321 | Dual N & P Channel Digital FET |
| FDG6321C | Tantalum Molded Capacitor; Capacitance: 150uF; Voltage: 6.3V; Packaging: Tape & Reel |
| FDG6322C | Dual N & P Channel Digital FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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