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參數(shù)資料
| 型號： | FDG6320C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 15uF; Voltage: 6.3V; Case Size: 3.8x6.5 mm; Packaging: Tape & Reel |
| 中文描述： | 220 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 196K |
| 代理商： | FDG6320C |
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V,
N-Ch
25
V
P-Ch
-25
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch
25
mV/
o
C
P-Ch
-19
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55°C
10
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-20 V, V
GS
= 0 V,
P-Ch
-1
μA
T
J
= 55°C
-10
I
GSS
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
N-Ch
100
nA
P-Ch
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
GS
= 4.5 V, I
D
= 0.22 A
N-Ch
0.65
0.85
1.5
V
P-Ch
-0.65
-0.82
-1.5
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
N-Ch
-2.1
mV/
o
C
P-Ch
2.1
R
DS(ON)
Static Drain-Source On-Resistance
N-Ch
2.6
4
T
J
=125°C
5.3
7
V
GS
= 2.7 V, I
D
= 0.19 A
V
GS
= -4.5 V, I
D
= -0.14 A
3.7
5
P-Ch
7.3
10
T
J
=125°C
11
17
V
GS
= -2.7 V, I
D
= -0.05 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 0.22 A
V
DS
= -5 V, I
D
= -0.14 A
10.4
13
I
D(ON)
On-State Drain Current
N-Ch
0.22
A
P-Ch
-0.14
g
FS
Forward Transconductance
N-Ch
0.2
S
P-Ch
0.12
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
N-Ch
9.5
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Ch
12
C
oss
Output Capacitance
N-Ch
6
P-Channel
P-Ch
7
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
1.3
P-Ch
1.5
FDG6320C Rev. D
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| FDG6321 | Dual N & P Channel Digital FET |
| FDG6321C | Tantalum Molded Capacitor; Capacitance: 150uF; Voltage: 6.3V; Packaging: Tape & Reel |
| FDG6322C | Dual N & P Channel Digital FET |
| FDG6323 | Integrated Load Switch |
| FDG6323L | Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 6.3V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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