參數(shù)資料
型號: FDG6318P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: CAP CER 1500PF 630V 10% X7R 1206
中文描述: 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 6 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 123K
代理商: FDG6318P
FDG6318P Rev C (W)
Typical Characteristics
0
0.6
1.2
1.8
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-3.5V
-4.5V
V
GS
= -10.0V
-3.0V
-6.0V
-2.5V
-2.0V
0.75
1
1.25
1.5
1.75
0
0.4
0.8
1.2
1.6
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.5V
-5.0V
-10.0V
-4.5V
-4.0V
-6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -0.5A
V
GS
= -4.5V
0.2
0.6
1
1.4
1.8
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -0.25A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.6
1.2
1.8
0.5
1
1.5
2
2.5
3
3.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關(guān)PDF資料
PDF描述
FDG6320C Tantalum Molded Capacitor; Capacitance: 15uF; Voltage: 6.3V; Case Size: 3.8x6.5 mm; Packaging: Tape & Reel
FDG6321 Dual N & P Channel Digital FET
FDG6321C Tantalum Molded Capacitor; Capacitance: 150uF; Voltage: 6.3V; Packaging: Tape & Reel
FDG6322C Dual N & P Channel Digital FET
FDG6323 Integrated Load Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6318PZ 功能描述:MOSFET Dual PCh Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6320C 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6320C 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6
FDG6320C_D87Z 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6321 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET