參數(shù)資料
型號(hào): FDG327N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: CAP CER 330PF 630VDC U2J 1206
中文描述: 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 6 PIN
文件頁數(shù): 4/5頁
文件大小: 79K
代理商: FDG327N
FDG327N Rev C (W)
Typical Characteristics
0
1
2
3
4
5
0
2
Q
g
, GATE CHARGE (nC)
4
6
V
G
,
I
D
= 1.5A
V
DS
= 5V
15V
10V
0
100
200
300
400
500
600
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 333
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
0
0.0000
1
2
4
6
8
10
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 333°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 333°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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