參數(shù)資料
型號(hào): FDG327N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: CAP CER 330PF 630VDC U2J 1206
中文描述: 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 6 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 79K
代理商: FDG327N
FDG327N Rev C (W)
Typical Characteristics
0
4
8
12
16
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
1.8V
2.0V
V
GS
= 4.5V
3.0V
2.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 1.8V
2.5V
2.0V
4.5V
3.0V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 1.5 A
V
GS
= 4.5V
0.02
0.06
0.1
0.14
0.18
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 0.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
=-55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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