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參數(shù)資料
| 型號： | FDG332PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97mヘ |
| 中文描述： | 2.6 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-70, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 374K |
| 代理商： | FDG332PZ |
tm
July 2007
F
M
2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
www.fairchildsemi.com
1
FDG332PZ
P-Channel PowerTrench
MOSFET
-
20V,
-
2.6A, 97m
Features
Max r
DS(on)
= 95m
at V
GS
= -4.5V, I
D
= -2.6A
Max r
DS(on)
= 115m
at V
GS
= -2.5V, I
D
= -2.2A
Max r
DS(on)
= 160m
at V
GS
= -1.8V, I
D
= -1.9A
Max r
DS(on)
= 3
3
0m
at V
GS
= -1.5V, I
D
= -1.0A
Very low level gate drive requirements allowing operation
in 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
General Description
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench
process. It has been optimized for
battery power management applications.
Applications
Battery management
Load switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-20
±8
-2.6
-9
0.75
0.48
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient Single operation (Note 1a)
170
°C/W
Thermal Resistance, Junction to Ambient Single operation (Note 1b)
260
Device Marking
.32
Device
FDG332PZ
Package
SC70-6
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
D
D
G
D
D
S
D
S
D
D
G
D
Pin 1
SC70-6
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