- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDG327N (FAIRCHILD SEMICONDUCTOR CORP) CAP CER 330PF 630VDC U2J 1206 PDF資料下載
參數(shù)資料
| 型號： | FDG327N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 330PF 630VDC U2J 1206 |
| 中文描述： | 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 79K |
| 代理商： | FDG327N |
FDG327N Rev C (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
12
mV/
°
C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
0.4
0.7
1.5
V
Gate Threshold Voltage
–3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= 2.5 V, I
D
= 1.4 A
V
GS
= 1.8 V, I
D
= 1.2 A
V
GS
= 4.5 V, I
D
= 1.5 A, T
J
=125
°
C
V
GS
= 4.5V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 1.5 A
57
66
82
72
90
100
140
115
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
6
A
S
9
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
423
87
48
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V
(Note 2)
6
12
13
29
4
6.3
ns
ns
ns
ns
nC
nC
nC
6.5
14
2
4.5
0.89
0.95
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 1.5 A,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
0.32
A
V
GS
= 0 V,
I
S
= 0.32 A
(Note 2)
0.75
1.2
V
Notes:
1.
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
300°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG328P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDG329N | CAP CER 220PF 1KVDC U2J 1206 |
| FDG330P | CAP CER 47PF 1KVDC U2J 1206 |
| FDG332PZ | P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97mヘ |
| FDG361N | CAP CER 68PF 1KVDC U2J 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG327N_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327NZ | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG327NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrenchO MOSFET |
| FDG327NZ_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG328P | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。