- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDG311N (FAIRCHILD SEMICONDUCTOR CORP) N-Channel 2.5V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDG311N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FDG311N |
F
FDG311N Rev. D
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
20
V
14
mV/
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.4
0.9
-3
1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V, I
D
= 1.9 A
V
GS
= 4.5 V, I
D
= 1.9 A,
T
J
= 125
°
C
I
D
= 1.6 A
V
GS
= 2.5 V,
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.5 A
0.082
0.110
0.105
0.115
0.170
0.150
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
4
A
S
6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
270
55
20
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
5
9
10
2
3
0.6
0.9
12
17
18
6
4.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 1.9 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
0.42
1.2
A
V
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.7
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 170
°
C/W when mounted on a 1 in
2
pad of 2oz copper.
b) 260
°
C/W when mounted on a minimum pad.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG312P | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDG313N | Digital FET, N-Channel |
| FDG314P | Digital FET, P-Channel |
| FDG315 | N-Channel Logic Level PowerTrench MOSFET |
| FDG315N | CAP CER 100PF 630VDC U2J 1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG311N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 20V, 1.9A, SC-70 |
| FDG311N_Q | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG312P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。