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參數(shù)資料
| 型號： | FDFS6N754 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM |
| 中文描述： | 4 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 341K |
| 代理商： | FDFS6N754 |
F
FDFS6N754 Rev. A
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 6V
V
GS
= 2.5V
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
On Region Characteristics
Figure 2.
4
8
12
16
20
0.5
1.0
1.5
2.0
2.5
3.0
1
V
GS
= 10V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
, DRAIN CURRENT(A)
On-Resistance vs Drain Current and
Gate Voltage
Figure 3.
-60
-30
0
30
60
90
120
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 4A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
On Resistance vs Temperature
Figure 4.
2
4
6
8
10
0.00
0.05
0.10
0.15
0.20
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 3A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5.
1
2
3
4
5
0
4
8
12
16
20
V
DS
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 6.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1E-3
0.01
0.1
1
10
30
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward Voltage
vs Source Current
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