參數(shù)資料
型號： FDFS6N754
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM
中文描述： 4 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, SOP-8
文件頁數(shù)： 2/7頁
文件大?。?/td> 341K
代理商： FDFS6N754
F
FDFS6N754 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
(Note 2)
Dynamic Characteristics
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics and Maximum Ratings
Schottky Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage
Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
30
V
24.5
mV/°C
I
DSS
Zero Gate Voltage Drain Current
1
μ
A
T
J
= 125°C
20
I
GSS
Gate to Source Leakage Current
±
100
nA
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
=3.5A
V
GS
= 10V, I
D
= 4A,
T
J
= 125°C
V
DS
= 5V, I
D
= 4A
1
1.7
2.5
V
-4.2
mV/°C
r
DS(on)
Drain to Source On Resistance
42
53
56
75
m
61
81
g
FS
Forward Transconductance
10
S
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
225
80
42
5.1
299
107
63
pF
pF
pF
f = 1.0MHz
V
DD
= 15V, I
D
= 1A
V
GS
= 10V, R
GS
= 6
6
8
12
16
32
10
6
3
ns
ns
ns
ns
nC
nC
nC
nC
20
2
4
2
0.6
1
V
DS
= 15V,
I
D
= 4A
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 1.3A (Note 2)
I
F
= 4A, di/dt = 100A/
μ
s
I
F
= 4A, di/dt = 100A/
μ
s
0.8
13
4
1.2
20
6
V
ns
nC
V
R
Reverse Breakdown Voltage
I
R
= 1mA
30
V
μ
A
mA
I
R
Reverse Leakage
V
R
= -10V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
39
18
225
140
364
290
250
V
F
Forward Voltage
I
F
= -100mA
280
mV
I
F
= -2A
450
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