參數(shù)資料
型號: FDFS6N548
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm
中文描述: 7 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOP-8
文件頁數(shù): 5/7頁
文件大小: 390K
代理商: FDFS6N548
F
M
FDFS6N548 Rev.B
www.fairchildsemi.com
5
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 15V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 10V
I
D
= 7A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
40
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
1
2
3
4
5
6
7
8
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Ambient Temperature
25
50
T
A
, AMBIENT TEMPERATURE
(
75
100
125
o
C
)
150
0
2
4
6
8
R
θ
JA
= 78
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
0.01
0.1
1
10
1s
10s
DC
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
I
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
50
80
Figure 12.
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= 10V
SINGLE PULSE
P
(
,
300
0.5
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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