參數(shù)資料
型號: FDFS6N548
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm
中文描述: 7 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOP-8
文件頁數(shù): 4/7頁
文件大?。?/td> 390K
代理商: FDFS6N548
F
M
FDFS6N548 Rev.B
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
5
10
15
20
25
30
V
GS
=
3.5V
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 4V
V
GS
=
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 3V
V
GS
= 10V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On-Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 7A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
4
6
8
10
10
20
30
40
50
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 7A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0
1
2
3
4
0
5
10
15
20
25
30
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
VDD = 5V
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
60
Source to Drain Diode
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