參數(shù)資料
型號: FDFMA2P853
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述: 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝: 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù): 5/7頁
文件大?。?/td> 307K
代理商: FDFMA2P853
F
FDFMA2P853 Rev. C (W)
5
Figure 7.
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -3.0A
V
DS
= -5V
-15V
-10V
Gate Charge Characteristics
Figure 8.
0
100
200
300
400
500
600
700
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Capacitance Characteristics
Figure 9.
0.001
0.01
0.1
1
10
0
0.1
0.2
V
F
, FORWARD VOLTAGE (V)
0.3
0.4
0.5
0.6
0.7
0.8
I
F
,
T
J
= 25
o
C
T
J
= 125
o
C
Schottky Diode Forward Voltage
Figure 10.
0.000001
0.00001
0.0001
0.001
0.01
0
5
V
R
, REVERSE VOLTAGE (V)
10
15
20
I
R
,
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 85
o
C
Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics
相關PDF資料
PDF描述
FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm
FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode
FDFMC2P120 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode
相關代理商/技術參數(shù)
參數(shù)描述
FDFMA2P853_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA2P853_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA2P853T 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P857 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P857_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ