參數(shù)資料
型號(hào)： FDFMA2P853
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝： 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù)： 2/7頁
文件大?。?/td> 307K
代理商： FDFMA2P853
F
FDFMA2P853 Rev. C (W)
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
V
GS
= 0V, I
D
= -250
μ
A
I
D
= -250
μ
A,
Referenced to 25°C
V
DS
= -16V, V
GS
= 0V
V
GS
=
±
8V, V
DS
= 0V
-20
-
-
V
-
-12
-
mV/°C
-
-
-
-
-1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A,
Referenced to 25°C
V
GS
= -4.5V, I
D
= -3.0A
V
GS
= -2.5V, I
D
= -2.5A
V
GS
= -1.8V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -3.0A
T
J
= 125°C
V
GS
= -4.5V, V
DS
= -5V
V
DS
= -5V, I
D
= -3.0A
-0.4
-0.7
-1.5
V
-
2
-
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
-
-
-
90
120
172
120
160
240
m
-
118
160
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-20
-
-
7
-
-
A
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
-
-
-
435
80
45
-
-
-
pF
pF
pF
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -10V, I
D
= -1A
V
GS
= -4.5V, R
GEN
= 6
-
-
-
-
-
-
-
9
18
19
27
12
6
-
-
ns
ns
ns
ns
nC
nC
nC
11
15
6
4
0.8
0.9
V
DS
= -10V, I
D
= -3.0A,
V
GS
= -4.5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
-
-
-
-
-
-1.1
-1.2
-
-
A
V
ns
nC
V
GS
= 0V, I
S
= -1.1 A (Note 2)
-0.8
17
6
I
F
= -3.0A, dI
F
/dt=100A/
μ
s
Schottky Diode Characteristic
I
R
Reverse Leakage
V
R
= 20V
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
-
-
-
-
-
9.9
0.3
2.3
0.4
0.3
100
1
10
0.46
0.35
μ
A
mA
mA
V
F
Forward Voltage
I
F
= 500mA
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFMA2P853_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
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