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參數(shù)資料
| 型號： | FDFMA2P857 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm |
| 中文描述： | 3 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, 2 X 2 MM, 0.80 MM HEIGHT, MICROFET-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 366K |
| 代理商： | FDFMA2P857 |
February 2007
F
2007 Fairchild Semiconductor Corporation
FDFMA2P857 Rev.B
www.fairchildsemi.com
1
FDFMA2P857
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
–
20V,
–
3.0A, 120m
Ω
Features
MOSFET
:
Max r
DS(on)
= 120m
Ω
at V
GS
= –4.5V, I
D
= –3.0A
Max r
DS(on)
= 160m
Ω
at V
GS
= –2.5V, I
D
= –2.5A
Max r
DS(on)
= 240m
Ω
at V
GS
= –1.8V, I
D
= –1.0A
Schottky:
V
F
< 0.54V @ 1A
Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
20
±8
–3
–6
1.4
0.7
–55 to +150
30
1
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
I
D
A
P
D
W
T
J
, T
STG
V
RRM
I
O
°
C
V
A
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
86
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
173
Thermal Resistance, Junction to Ambient (Note 1c)
86
Thermal Resistance, Junction to Ambient (Note 1d)
140
Device Marking
.857
Device
FDFMA2P857
Package
MicroFET 2x2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
MicroFET 2x2
Pin 1
A
NC
D
C
G
S
1
3
2
4
5
6
A
NC
D
C
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
| FDFMA2P859T | 功能描述:MOSFET PT2 Pch 20V/8V & Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA3N109 | 功能描述:MOSFET PowerTrench MOSFET and Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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