參數(shù)資料
型號(hào)： FDD8750
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm
中文描述： 6.5 A, 25 V, 63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 4/6頁
文件大?。?/td> 328K
代理商： FDD8750
F
M
FDD8750 Rev.C
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
0
2
4
6
8
10
I
D
= 2.7A
V
DD
= 18V
V
DD
= 8V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 13V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
600
20
Capacitance vs Drain
to Source Voltage
Figure 9.
1E-3
0.01
t
AV
, TIME IN AVALANCHE(ms)
0.1
1
10
1
1
2
3
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
A
,
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
175
0
4
8
12
16
20
Limited by Package
R
θ
JC
= 8
o
C/W
V
GS
=4.5V
V
GS
= 10V
I
D
,
T
C
, CASE TEMPERATURE
(
Maximum Continuous Drain
o
C
)
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
0.1
1
10
DC
10ms
1ms
100us
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
O
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
D
,
50
60
Figure 12.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
3000
T
c
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175
----------------------
T
c
–
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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參數(shù)描述
FDD8770 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8778 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8780 功能描述:MOSFET 25V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8782 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8796 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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