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參數(shù)資料
| 型號： | FDD8750 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm |
| 中文描述： | 6.5 A, 25 V, 63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 328K |
| 代理商： | FDD8750 |
tm
December 2006
F
M
2006 Fairchild Semiconductor Corporation
FDD8750 Rev.C
www.fairchildsemi.com
1
FDD8750
N-Channel PowerTrench
MOSFET
25V, 2.7A, 40m
Features
Max r
DS(on)
= 40m
at V
GS
= 10V, I
D
= 2.7A
Max r
DS(on)
= 60m
at V
GS
= 4.5V, I
D
= 2.7A
Low gate charge: Q
g(10)
= 6nC(Typ)
Low gate resistance
Avalanche rated and 100% tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall effciency of DC/DC converters using either
synchronous or conventional switching PWM controllers.It has
been optimized for low gate charge, low r
DS(on)
and fast
switching speed.
Application
Low current DC-DC switching
Linear regulation
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
25
±20
2.7
16
6.5
14
19
18
3.7
–55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited) T
C
= 25°C
-Continuous(Silicon Limited) T
C
= 25°C (Note 1)
-Continuous
T
A
= 25°C
(Note 1a)
-Pulsed
Drain-Source Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
8
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
40
Device Marking
FDD8750
Device
FDD8750
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
G
S
D
D-PAK
(TO-252)
S
D
G
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| FDD8796 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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