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參數(shù)資料
| 型號： | FDD8750 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm |
| 中文描述： | 6.5 A, 25 V, 63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 328K |
| 代理商： | FDD8750 |
F
M
FDD8750 Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
V
GS
= 4V
V
GS
= 4.5V
V
GS
=
5V
V
GS
=
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
10
20
30
40
50
60
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=
5V
V
GS
=
4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 4V
V
GS
=
10V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-75 -50 -25
0
25
50
75
100 125 150 175
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 2.7A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
3
4
5
6
7
8
9
10
20
40
60
80
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 7.4A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0
2
4
6
8
0
10
20
30
40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
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