參數(shù)資料
型號(hào): FDD8586
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM
中文描述: 35 A, 20 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 373K
代理商: FDD8586
F
FDD8586/FDU8586 Rev. B
www.fairchildsemi.com
4
Figure 7.
0
5
10
Q
g
, GATE CHARGE(nC)
15
20
25
30
35
0
2
4
6
8
10
V
DD
= 10V
V
DD
= 7V
V
G
,
V
DD
= 13V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
5000
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
(
A
)
50
Unclamped Inductive Switching
Capability
Figure 10.
25
50
75
100
125
150
175
0
20
40
60
80
100
CURRENT LIMITED
BY PACKAGE
R
θ
JC
= 1.94
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
T
C
, CASE TEMPERATURE
(
o
C
)
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
1
10
0.1
1
10
100
1000
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
TC = 25
O
C
50
Forward Bias Safe Operating Area
Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
10000
P
(
P
)
,
V
GS
= 10V
SINGLE PULSE
t, PULSE WIDTH (s)
50
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
-----150
C
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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