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參數(shù)資料
| 型號： | FDD8586 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM |
| 中文描述： | 35 A, 20 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 373K |
| 代理商： | FDD8586 |
F
FDD8586/FDU8586 Rev. B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
120
140
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0
20
40
60
80
100
120
140
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
V
GS
=
5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
=
3.5V
On-Resistance vs Drain
Figure 3.
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.0
4.5
6.0
7.5
9.0
3
6
9
12
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 35A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
20
40
60
80
100
120
140
V
DD
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= - 55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
200
Source to Drain Diode Forward
Voltage vs Source Current
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