參數(shù)資料
型號: FDD8424H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N & P-Channel PowerTrench㈢ MOSFET
中文描述: 20 A, 40 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, TO-252, DPAK-4
文件頁數(shù): 8/12頁
文件大?。?/td> 591K
代理商: FDD8424H
F
www.fairchildsemi.com
8
2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Typical Characteristics (Q2 P-Channel)
0
1
2
3
4
0
10
20
30
40
V
GS
=
-
3V
V
GS
=
-
4V
V
GS
=
-
10V
V
GS
=
-
3.5V
V
GS
=
-
4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 14.
On- Region Characteristics
0
10
20
30
40
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -3V
V
GS
= -4V
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-
I
D
, DRAIN CURRENT(A)
Figure 15.
Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -6.5A
V
GS
= -10V
N
2
4
6
8
10
0
40
80
120
160
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -6.5A
r
D
,
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 18. Transfer Characteristics
1
2
3
4
5
0
10
20
30
40
V
DS
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
I
D
,
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
0.0
0.3
0.6
0.9
1.2
1.5
0.001
0.01
0.1
1
10
40
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
J
= 25°C unless otherwise noted
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