參數(shù)資料
型號： FDD8424H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel PowerTrench㈢ MOSFET
中文描述： 20 A, 40 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, TO-252, DPAK-4
文件頁數(shù)： 5/12頁
文件大小： 591K
代理商： FDD8424H
F
www.fairchildsemi.com
5
2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Figure 7.
0
4
8
12
16
0
2
4
6
8
10
I
D
= 9A
V
DD
= 25V
V
DD
= 20V
V
DD
= 15V
Q
g
,
GATE CHARGE(nC)
V
G
,
G
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
2000
30
f = 1MHz
V
GS
= 0V
C
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
40
Capacitance vs Drain
to Source Voltage
Figure 9.
0.001
0.01
0.1
1
10
100
1
10
T
J
= 125
o
C
T
J
= 25
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
30
Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
25
50
75
100
125
150
0
5
10
15
20
25
30
Limited by Package
R
θ
JC
= 4.1
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Figure 11. Forward Bias Safe
Operating Area
1
10
0.1
1
10
100
10us
DC
10ms
1ms
100us
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 4.1
o
C/W
T
C
=
25
o
C
THIS AREA IS
LIMITED BY r
DS(on)
V
DS
,
DRAIN to SOURCE VOLTAGE (V)
I
D
,
D
80
Figure 12.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
10000
V
GS
= 10V
SINGLE PULSE
R
θ
JC
= 4.1
o
C/W
P
(
P
)
,
P
t, PULSE WIDTH (s)
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
------125
–
T
C
= 25
o
C
Single Pulse Maximum
Power Dissipation
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8424H_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8424H_F085 功能描述:MOSFET PT2 P-Channel and PT4 N-channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A 功能描述:MOSFET Dual N&PCH PwrTrench +/- 40V,20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A_13 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8426H 功能描述:MOSFET Dual N & P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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