參數(shù)資料
型號： FDD8424H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel PowerTrench㈢ MOSFET
中文描述： 20 A, 40 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, TO-252, DPAK-4
文件頁數(shù)： 3/12頁
文件大?。?/td> 591K
代理商： FDD8424H
F
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Notes:
1.
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
CA
is determined
by the user's board design.
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, N-ch: L = 0.3mH, I
AS
= 14A, V
DD
= 40V, V
GS
= 10V; P-ch: L = 0.3mH, I
AS
= -15A, V
DD
= -40V, V
GS
= -10V.
a. 40°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Q1
Q2
a. 40°C/W when mounted on
a 1 in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
Scale 1 : 1 on letter size paper
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Drain-Source Diode Characteristics
Source to Drain Diode Forward VoltageV
GS
= 0V, I
S
= 9.0A (Note 2)
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
V
SD
V
GS
= 0V, I
S
= -6.5A (Note 2)
Q1
I
F
= 9.0A, di/dt = 100A/s
Q2
I
F
= -6.5A, di/dt = 100A/s
Q1
Q2
Q1
Q2
Q1
Q2
0.87
0.88
25
29
19
29
1.2
-1.2
38
44
29
44
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
nC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8424H_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8424H_F085 功能描述:MOSFET PT2 P-Channel and PT4 N-channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A 功能描述:MOSFET Dual N&PCH PwrTrench +/- 40V,20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A_13 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8426H 功能描述:MOSFET Dual N & P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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