參數(shù)資料
型號(hào)： FDD6612A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel, Logic Level, PowerTrench⑩ MOSFET
中文描述： 9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 122K
代理商： FDD6612A
FDD6612A/FDU6612A Rev. E(W)
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
2.3
1.2
A
V
V
GS
= 0 V,
I
S
= 2.3 A
(Note 2)
0.8
IF = 9.5 A, diF/dt = 100 A/μs
20
10
nS
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
F
相關(guān)PDF資料
PDF描述
FDU6612A 30V N-Channel PowerTrench MOSFET
FDD6612 N-Channel, Logic Level, PowerTrench⑩ MOSFET
FDD6630A N-Channel PowerTrench⑩ MOSFET
FDD6632 N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252
FDD6612A_F054 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel
FDD6612A_OLDDI 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH
FDD6630A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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