參數(shù)資料
型號： FDD603AL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 33 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 237K
代理商： FDD603AL
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
W
DSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
DD
= 15 V, I
D
= 12 A
100
mJ
I
AR
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
12
A
V
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
30
32
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
10
100
μ
A
nA
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
1
1.7
-4.5
3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 10 V, I
D
= 9.5 A,T
J
=125
°
C
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 9.5 A
0.016
0.024
0.026
0.023
0.035
0.037
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
60
A
S
18
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
670
345
95
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
10
16
27
12
19
3.5
5.5
20
30
45
22
26
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A
V
GS
= 10 V, R
GEN
= 6
V
DS
=10 V, I
D
= 9.5 A
V
GS
= 10 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
( Note 1)
V
SD
Drain-Source Diode Forward
Voltage
33
1.2
A
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.78
θ
θ
θ
θ
! "
≤
#$$
μ
%&'
≤
($)
*
θ
+,$ '-"
((
*
θ
+./ '-"
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