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參數(shù)資料
| 型號(hào)： | FDD5810 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm |
| 中文描述： | 7.7 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | FDD5810 |
FDD5810 Rev. A (W)
www.fairchildsemi.com
F
5
Figure 5.
1
10
100
1
10
100
0.1
DC
10ms
1ms
100
μ
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
C
Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
1
10
100
0.001
0.01
0.1
1
10
100
500
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
Figure 7.
0
20
40
60
0
1.0
2.0
3.0
4.0
5.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 6V
Transfer Characteristics
Figure 8. Saturation Characteristics
0
20
40
60
0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 5V
Figure 9.
14
18
22
26
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 35A
R
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
30
Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10.
Resistance vs Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 5V, I
D
= 35A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD5810_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench㈢ MOSFET |
| FDD5810_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench?? MOSFET 60V, 36A, 27m" |
| FDD5810_F085 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5810_SB82124 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CHANNEL LOGIC LEVEL TRENCH MOSFET |
| FDD5810-F085 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm |
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