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參數(shù)資料
| 型號： | FDD5680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, PowerTrench⑩ MOSFET |
| 中文描述： | 38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | FDD5680 |
F
FDD5680, Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.0001
0.001
0.01
0.1
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R =
96°C/W
JA
T - T = P * R JA
P(pk)
t
1
t
2
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
I
D
= 8.5A
V
DS
= 10V
20V
30V
0
500
1000
1500
2000
2500
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
DC
10S
1S
100ms
10ms
1ms
100
μ
s
0
20
40
60
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FDD5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
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