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參數(shù)資料
| 型號(hào)： | FDD5680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, PowerTrench⑩ MOSFET |
| 中文描述： | 38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | FDD5680 |
F
FDD5680, Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
W
DSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
DD
= 30 V, I
D
= 38 A
140
mJ
I
AR
BV
DSS
38
A
V
V
GS
= 0 V, I
D
= 250
μ
A
60
BV
DSS
T
J
I
DSS
I
GSSF
I
D
= 250
μ
A, Referenced to 25
°
C
60
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.4
-6.4
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 8.5 A
V
GS
= 10 V, I
D
= 8.5 A,T
J
=125
°
C
V
GS
= 6 V, I
D
= 7.5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 8.5 A
0.017
0.028
0.019
0.021
0.042
0.025
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
50
A
S
30
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1835
210
90
pF
pF
pF
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
15
9
35
16
33
6.5
7.5
27
18
56
26
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 30 V, I
D
= 8.5 A,
V
GS
= 10 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
2.3
1.2
A
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.75
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) R
θ
JA
= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W when mounted
on a 0.076 pad of 2oz copper.
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