參數(shù)資料
型號(hào)： FDD5670
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 60V N-Channel PowerTrenchTM MOSFET
中文描述： 21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 106K
代理商： FDD5670
F
FDD5670 Rev. A
Electrical Characteristics
T
C
=25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
60
V
μ
A
nA
nA
1
100
-100
ON CHARACTERISTICS
(Note 2)
V
GS(TH)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
= 10 A
V
GS
= 6 V, I
D
= 9 A
2
4
V
0.015
0.018
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
48
1.2
A
V
V
GS
= 0 V, I
S
= 2.4 A
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) R
θ
JA
= 45oC/W when mounted on
a 1 in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD5670_11 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench?? MOSFET
FDD5680 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD5690 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD5690 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD5690_02 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET
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