參數(shù)資料
型號(hào): FDD5614
廠商: Fairchild Semiconductor Corporation
英文描述: 60V P-Channel PowerTrench MOSFET
中文描述: 60V的P溝道PowerTrench MOSFET的
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 81K
代理商: FDD5614
FDD5614P Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= -4.5A
V
DS
= -40V
-20V
-30V
0
200
400
600
800
1000
0
10
20
30
40
50
60
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDD5614P 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT
FDD5614P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK
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FDD5614P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252