參數(shù)資料
型號(hào)： FDD3682
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 100V, 32A, 36mз
中文描述： 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 266K
代理商： FDD3682
2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25
°
C, L = 0.27mH, I
AS
= 20A.
Device Marking
FDD3682
Device
FDD3682
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 32A, V
GS
= 10V
I
D
= 16A, V
GS
= 6V
I
D
= 32A, V
GS
= 10V,
T
C
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.032
0.040
0.036
0.060
-
0.080
0.090
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1250
190
45
18.5
2.4
6.5
4.1
4.6
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 32A
I
g
= 1.0mA
28
3.6
-
-
-
V
DD
= 50V, I
D
= 32A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
-
9
46
24
26
-
83
-
-
-
-
75
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 32A
I
SD
= 16A
I
SD
= 32A, dI
SD
/dt = 100A/
μ
s
I
SD
= 32A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
55
92
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovery Charge
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參數(shù)描述
FDD3682 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD3682 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD TO-252AA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, SMD, TO-252AA
FDD3682_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 32A, 36m??
FDD3682_F085 功能描述:MOSFET N-Channel PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD3690 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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