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參數(shù)資料
| 型號： | FDD24AN06LA0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET |
| 中文描述： | 7.1 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 226K |
| 代理商： | FDD24AN06LA0 |
2004 Fairchild Semiconductor Corporation
FDD24AN06LA0 Rev. A1
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
10
20
30
40
50
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 5V
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
30
400
I
D
,
t, PULSE WIDTH (s)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 5V
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相關代理商/技術參數(shù) |
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|---|---|
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