參數(shù)資料
型號: FDD13AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: RECTIFIER SCHOTTKY SINGLE 3A 40V 80A-ifsm 0.5V-vf 0.5mA-ir DO-201AD 500/BULK
中文描述: 9.9 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 5/11頁
文件大?。?/td> 281K
代理商: FDD13AN06A0
2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. A1
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
-80
-40
0
40
80
120
160
200
0.9
1.0
1.1
1.2
100
1000
40
3000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0.1
1
10
60
0
2
4
6
8
10
0
5
10
15
20
25
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD13AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 60V, 9.9A, TO-252AA
FDD13AN06A0_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 13.5m??
FDD13AN06A0_F085 功能描述:MOSFET Trans N-Ch 60V 9.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD13AN06A0_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDD13AN06A0_Q 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube