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參數(shù)資料
| 型號： | FDD13AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | RECTIFIER SCHOTTKY SINGLE 3A 40V 80A-ifsm 0.5V-vf 0.5mA-ir DO-201AD 500/BULK |
| 中文描述： | 9.9 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 281K |
| 代理商： | FDD13AN06A0 |
2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 45
μ
H, I
AS
= 50A.
Device Marking
FDD13AN06A0
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD13AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 25A, V
GS
= 6V
I
D
= 50A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0115 0.0135
0.022
0.034
-
0.026
0.030
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1350
260
90
22
2.6
8.2
5.6
6.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 50A
I
g
= 1.0mA
29
3.4
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 50A
V
GS
= 10V, R
GS
= 12
-
-
-
-
-
-
-
9
130
-
-
-
-
77
ns
ns
ns
ns
ns
ns
77
26
25
-
V
SD
Source to Drain Diode Voltage
I
SD
= 50A
I
SD
= 25A
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
24
15
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD13AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 60V, 9.9A, TO-252AA |
| FDD13AN06A0_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 13.5m?? |
| FDD13AN06A0_F085 | 功能描述:MOSFET Trans N-Ch 60V 9.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD13AN06A0_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDD13AN06A0_Q | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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