參數(shù)資料
型號: FDD13AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: RECTIFIER SCHOTTKY SINGLE 3A 40V 80A-ifsm 0.5V-vf 0.5mA-ir DO-201AD 500/BULK
中文描述: 9.9 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 10/11頁
文件大?。?/td> 281K
代理商: FDD13AN06A0
2003 Fairchild Semiconductor Corporation
FDD13AN06A0 Rev. A1
F
PSPICE Thermal Model
REV 22 August 2002
FDD13AN06A0T
CTHERM1 TH 6 9.7e-4
CTHERM2 6 5 6.2e-3
CTHERM3 5 4 4.6e-3
CTHERM4 4 3 4.9e-3
CTHERM5 3 2 8e-3
CTHERM6 2 TL 4.2e-2
RTHERM1 TH 6 5.24e-2
RTHERM2 6 5 10.08e-2
RTHERM3 5 4 4.28e-1
RTHERM4 4 3 1.8e-1
RTHERM5 3 2 1.9e-1
RTHERM6 2 TL 2.1e-1
SABER Thermal Model
SABER thermal model FDD13AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9.7e-4
ctherm.ctherm2 6 5 =6.2e-3
ctherm.ctherm3 5 4 =4.6e-3
ctherm.ctherm4 4 3 =4.9e-3
ctherm.ctherm5 3 2 =8e-3
ctherm.ctherm6 2 tl =4.2e-2
rtherm.rtherm1 th 6 =5.24e-2
rtherm.rtherm2 6 5 =10.08e-2
rtherm.rtherm3 5 4 =4.28e-1
rtherm.rtherm4 4 3 =1.8e-1
rtherm.rtherm5 3 2 =1.9e-1
rtherm.rtherm6 2 tl =2.1e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相關PDF資料
PDF描述
FDD14AN06LA0 N-Channel PowerTrench MOSFET 60V, 50A, 14.6m???
FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
FDD20AN06A0 N-Channel PowerTrench MOSFET
FDD24AN06LA0 N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET
FDD2512 150V N-Channel PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDD13AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 60V, 9.9A, TO-252AA
FDD13AN06A0_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 13.5m??
FDD13AN06A0_F085 功能描述:MOSFET Trans N-Ch 60V 9.9A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD13AN06A0_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDD13AN06A0_Q 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube