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參數(shù)資料
| 型號： | FDC6506 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| 中文描述： | 雙P溝道邏輯電平的PowerTrench MOSFET的⑩ |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | FDC6506 |
F
FDC6506P Rev. C
a) 130
°
C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°
C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°
C/W when
mounted on a 0.0015 in
2
pad of 2 oz. copper.
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
is guaranteed by design while R
θ
JA
is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-30
V
-20
mV/
°
C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-1
-1.8
4
-3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -10 V, I
D
= -1.8 A
V
GS
= -10 V, I
D
= -1.8 A @125
°
C
V
GS
= -4.5 V, I
D
= -1.4 A
V
GS
= -10 V, V
DS
= - 5 V
V
DS
= -5 V, I
D
= -1.8 A
0.14
0.20
0.22
0.17
0.27
0.28
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-10
A
S
3
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
190
70
30
pF
pF
pF
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
7
8
14
2
2.3
1
0.8
14
16
25
6
3.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -5 V, I
D
= -1.8 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-0.8
-1.2
A
V
V
GS
= 0 V, I
S
= -0.8 A
(Note 2)
-0.8
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| FDC6506P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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