參數(shù)資料
型號(hào)： FDC642P
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： P-Channel 2.5V Specified PowerTrench⑩MOSFET
中文描述： 4000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, SUPERSOT-6
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 269K
代理商： FDC642P
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
Breakdown Voltage Temperature
-16
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.7
2.5
-1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= -4.5 V, I
D
= -4 A, T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -3.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -4 A
0.054
0.076
0.077
0.065
0.105
0.100
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-10
A
S
9
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
640
180
90
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
11
19
26
35
7.2
1.7
1.6
20
30
42
55
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -10 V, I
D
= -4 A
V
GS
= -4.5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-1.3
-1.2
A
V
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.75
θ
θ
θ
≤
μ
!"#
≤
$ %
&'(
°
#)*
$+
&*,-
°
#)+
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDC6432SH 功能描述:MOSFET 12V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC645 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
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