參數(shù)資料
型號： FDC6306P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
中文描述： 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/8頁
文件大?。?/td> 235K
代理商： FDC6306P
F
FDC6306P Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
-18
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.9
3
-1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -1.9 A
V
GS
= -4.5 V, I
D
= -1.9 A @125
°
C
V
GS
= -2.5 V, I
D
= -1.7 A
V
GS
= -4.5 V, V
DS
=- 5 V
V
DS
= -5 V, I
D
= -1.9 A
0.127
0.182
0.194
0.170
0.270
0.250
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-5
A
S
4
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
441
127
67
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
6
9
14
3
3
0.7
0.8
12
18
25
9
4.2
ns
ns
ns
ns
nC
nC
nC
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -10 V, I
D
= -1.9 A,
V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-0.8
-1.2
A
V
V
GS
= 0 V, I
S
= -0.8 A
(Note 2)
-0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
is guaranteed by design while R
θ
JA
is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 130
°
C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°
C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°
C/W when
mounted on a 0.0015 in
2
pad of 2 oz. copper.
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相關代理商/技術參數(shù)
參數(shù)描述
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6306P_D87Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6306P_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET P-CH 20V 1.9A 6-Pin SuperSOT T/R
FDC6306P_Q 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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