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參數(shù)資料
| 型號： | FDC6312P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| 中文描述： | 2300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 88K |
| 代理商： | FDC6312P |
January 2001
2001 Fairchild Semiconductor Corporation
FDC6312P Rev C (W)
FDC6312P
Dual P-Channel 1.8V PowerTrench
Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
Power management
Load switch
Features
–2.3 A, –20 V. R
DS(ON)
= 115 m
@ V
GS
= –4.5 V
R
DS(ON)
= 155 m
@ V
GS
= –2.5 V
R
DS(ON)
= 225 m
@ V
GS
= –1.8 V
High performance trench technology for extremely
low R
DS(ON)
SuperSOT
TM
-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT -6
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
8
–2.3
–7
0.96
0.9
0.7
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.312
FDC6312P
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6312P_Q | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6318 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| FDC6318P | 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6318P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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