參數(shù)資料
型號： FDC6304P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： RES 160-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-0805 TR-7-PA ROHS
中文描述： 460 mA, 25 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/4頁
文件大?。?/td> 74K
代理商： FDC6304P
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-25
V
Breakdown Voltage Temp. Coefficient
-22
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= -20 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSS
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage Current
V
GS
= -8 V, V
DS
= 0 V
-100
nA
Gate Threshold Voltage Temp. Coefficient
I
D
= -250 μA, Referenced to 25
o
C
2.1
mV /
o
C
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= -2.7 V, I
D
= -0.25 A
V
GS
= -4.5 V, I
D
= -0.5 A
-0.65
-0.86
-1.5
V
1.22
1.5
0.87
1.1
T
J
=125°C
1.21
2
I
D(ON)
On-State Drain Current
V
GS
= -2.7 V, V
DS
= -5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -0.5 A
-0.5
A
-1
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
0.8
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
62
pF
Output Capacitance
35
pF
Reverse Transfer Capacitance
9.5
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= -6 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 50
7
20
ns
Turn - On Rise Time
8
20
ns
Turn - Off Delay Time
55
110
ns
Turn - Off Fall Time
35
70
ns
Total Gate Charge
V
DS
= -5 V, I
D
= - 0.25 A,
V
GS
= -4.5 V
1.1
1.5
nC
Gate-Source Charge
0.32
nC
Gate-Drain Charge
0.28
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.5 A
(Note 2)
-0.88
-1.2
V
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6304P Rev.D
b. 180
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
a. 140
O
C/W on a 0.125 in
2
pad of
2oz copper.
相關(guān)PDF資料
PDF描述
FDC6305 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6306P Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDC6308P Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P_Q 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6305 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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