參數(shù)資料
型號(hào)： FDC6304P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： RES 160-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-0805 TR-7-PA ROHS
中文描述： 460 mA, 25 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 74K
代理商： FDC6304P
July 1997
FDC6304P
Digital FET, Dual P-Channel
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDC6304P
Units
V
DSS
Drain-Source Voltage
-25
V
V
GSS
Gate-Source Voltage
-8
V
I
D
Drain Current
- Continuous
-0.46
A
- Pulsed
-1
P
D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6304P Rev.D
-25 V, -0.46 A continuous, -1.0 A Peak.
R
DS(ON)
= 1.5
@ V
GS
= -2.7 V
R
DS(ON)
= 1.1
@ V
GS
= -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
.
These P-Channel enhancement mode field effect transistor are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Mark: .304
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
5
6
3
2
1
4
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
FDC6305 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6306P Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDC6308P Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6304P_Q 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6305 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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