參數(shù)資料
型號: FDC6301
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel , Digital FET
中文描述: 雙N溝道,數(shù)字場效應(yīng)管
文件頁數(shù): 4/4頁
文件大小: 73K
代理商: FDC6301
FDC6301N Rev.C
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
0.1
0.2
Q , GATE CHARGE (nC)
0.3
0.4
0.5
0.6
0
1
2
3
4
5
V
G
I = 0.2A
15V
V = 5V
DS
10V
Figure 7. Gate Charge Characteristics
.
0.5
1
2
5
10
15
25
35
0.01
0.02
0.05
0.1
0.2
0.5
1
V , DRAI N-SOURCE VOLTAGE (V)
I
D
DC
1s
100ms
1ms
10ms
RDS(ON)LMT
V = 2.7V
SINGLE PULSE
R =See note 1b
T = 25°C
GS
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.1
0.5
1
2
5
10
25
1
2
3
5
10
20
30
DS
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics
.
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