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參數(shù)資料
| 型號： | FDC6301N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel , Digital FET |
| 中文描述： | 220 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | FDC6301N |
July 1997
FDC6301N
Dual N-Channel , Digital FET
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDC6301N
Units
V
DSS
, V
CC
Drain-Source Voltage, Power Supply Voltage
25
V
V
GSS
, V
IN
Gate-Source Voltage, V
IN
Drain/Output Current
8
V
I
D
, I
OUT
- Continuous
0.22
A
- Pulsed
0.5
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
0.7
T
J
,T
STG
ESD
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6301N Rev.C
25 V, 0.22 A continuous, 0.5 A Peak.
R
DS(ON)
= 5
@ V
GS
= 2.7 V
R
DS(ON)
= 4
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild 's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for digital transistors. Since bias
resistors are not required, these N-Channel FET's can replace
several digital transistors, with a variety of bias resistors.
D
S
G
IN
GND
Vcc
INVERTER APPLICATION
OUT
Mark: .301
1
5
4
2
3
6
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes |
| FDC6301N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CH MOSFET, 25V, SUPER SOT-6 |
| FDC6301N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET N-CH 25V 0.22A 6PIN SUPERSOT - Tape and Reel |
| FDC6301N_Q | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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