參數(shù)資料
型號(hào): FDC6301
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel , Digital FET
中文描述: 雙N溝道,數(shù)字場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 73K
代理商: FDC6301
FDC6301N Rev.C
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
V , DRAIN-SOURCE VOLTAGE (V)
I
3.5
2.7
2.5
2.0
1.5
D
3.0
V = 4.5V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1
1.2
1.4
I , DRAIN CURRENT (A)
D
V = 2.0V
2.7
3.0
4.0
4.5
3.5
2.5
R
D
)
,
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 2.7 V
I = 0.2A
R
D
Figure 3.
On-Resistance Variation
with Temperature
.
0.5
1
1.5
2
2.5
0
0.05
0.1
0.15
0.2
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5.0V
J
Figure 5. Transfer Characteristics.
0.2
0.4
V , BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.2
0.5
I
S
J
25°C
-55°C
V = 0V
Figure 6.
Body Diode Forward Voltage
Variation with Source Current and Temperature.
2
2.5
3
3.5
4
4.5
5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I = 0.2A
R
D
125°C
25°C
Figure 4.
On Resistance
Variation with
Gate-To- Source Voltage.
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