參數(shù)資料
型號： FDC610PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel PowerTrench㈢ MOSFET
中文描述： 4.9 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, SUPERSOT-6
文件頁數(shù)： 3/6頁
文件大?。?/td> 412K
代理商： FDC610PZ
F
FDC610PZ Rev
.
B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
5
10
15
20
V
GS
= -5V
V
GS
=
-10V
V
GS
=
-4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -4V
V
GS
= -3.5V
-
D
,
D
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
5
-I
D
,
DRAIN CURRENT(A)
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
=
-5V
V
GS
=
-3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
V
GS
=
-4.5V
V
GS
= -4V
V
GS
=
-10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -4.9A
V
GS
= -10V
N
Figure 4.
3
4
5
6
7
8
9
10
0
50
100
150
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -4.9A
r
D
,
S
(
m
)
-V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
0
5
10
15
20
V
DD
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
20
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
Source to Drain Diode
相關(guān)PDF資料
PDF描述
FDC6301 Dual N-Channel , Digital FET
FDC6301N Dual N-Channel , Digital FET
FDC6302P Digital FET, Dual P-Channel
FDC6303 Digital FET, Dual N-Channel
FDC6303N Digital FET, Dual N-Channel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC610PZ 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA
FDC610PZ_G 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
FDC6301 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET
FDC6301N 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6301N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*